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Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and espe.
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. D www.DataSheet4U.com G S Absolute Maximum Ratings S.
SW640 - Shenzhen
SHENZHEN SUNNYWAY BATTERY TECH CO.,LTD. R SW640(6V4.0AH) Outer dimensions (mm) 70 48 101 Specifications Nominal Volt.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SW601Q |
SEMIPOWER |
N-Channel MOSFET |
|
| 2 | SW60N06T |
SEMIPOWER |
MOSFET |
|
| 3 | SW6100 |
SUNNYWAY |
BATTERY |
|
| 4 | SW630 |
Samwin |
N-Channel MOSFET |
|
| 5 | SW630A |
SEMIPOWER |
MOSFET |
|
| 6 | SW634 |
Samwin |
N-Channel MOSFET |
|
| 7 | SW65-0003 |
Tyco Electronics |
GaAs SP8T Reflective Switch |
|
| 8 | SW65-0014 |
Tyco Electronics |
GaAs SPST Absorptive Switch |
|
| 9 | SW65-0114 |
Tyco Electronics |
GaAs SPDT Absorptive Switch |
|
| 10 | SW65-0214 |
Tyco Electronics |
GaAs SP3T Absorptive Switch |
|
| 11 | SW65-0313 |
Tyco Electronics |
GaAs SP2T Absorptive Switch |
|
| 12 | SW65-0314 |
Tyco Electronics |
GaAs SP4T Absorptive Switch |
|