This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 600V ID : 6A RDS(ON) :1.4Ω 2 1 3 Item Sales Type 1 SW F 6N60D 2 SW D 6N6.
TO-220F TO-252 TO-251N
High ruggedness
Low RDS(ON) (Typ 1.4Ω)@VGS=10V
Low Gate Charge (Typ 23nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: UPS,Inverter,TV-POWER
12 3
123
123
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes
BVDSS : 600V
ID
: 6A
RDS(ON) :1.4Ω
2
1 3
Item
Sales Type
1
SW F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SW6N60 |
SEMIPOWER |
MOSFET | |
2 | SW6N65 |
SEMIPOWER |
MOSFET | |
3 | SW6N70DB |
Samwin |
N-channel MOSFET | |
4 | SW6N90 |
SEMIPOWER |
N-channel TO-262 MOSFET | |
5 | SW601Q |
SEMIPOWER |
N-Channel MOSFET | |
6 | SW60N06T |
SEMIPOWER |
MOSFET | |
7 | SW6100 |
SUNNYWAY |
BATTERY | |
8 | SW630 |
Samwin |
N-Channel MOSFET | |
9 | SW630A |
SEMIPOWER |
MOSFET | |
10 | SW634 |
Samwin |
N-Channel MOSFET | |
11 | SW640 |
Samwin |
N-Channel MOSFET | |
12 | SW640 |
Shenzhen |
Battery |