SW6N70DB - Samwin

SW6N70DB N-channel MOSFET

This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 700V ID : 6A RDS(ON) : 1.4Ω 2 1 3 Order Codes Item Sales Type 1 SW F 6N70DB 2 SW D .

Features

 High ruggedness
 Low RDS(ON) (Typ 1.4Ω)@VGS=10V
 Low Gate Charge (Typ 30nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED, PC Power, Charger TO-220F TO-252 TO-251N 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 700V ID : 6A RDS(ON) : 1.4Ω 2 1 3 Order Codes Item Sales Type 1 S.