SUM110P08-11L - Vishay

SUM110P08-11L P-Channel MOSFET

SUM110P08-11L Vishay Siliconix P-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.0112 at VGS = - 10 V - 80 0.0145 at VGS = - 4.5 V ID (A)b - 110 - 109 Qg (Typ) 85 nC TO-263 FEATURES • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S GDS Top View Drain Connected to.

Features

• TrenchFET® Power MOSFET
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S GDS Top View Drain Connected to Tab Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C TA = 25 °C ID TA = 125 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche.