SUM110P08-11 - Vishay

SUM110P08-11 P-Channel MOSFET

New Product P-Channel 80-V (D-S) MOSFET SUM110P08-11 Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 80 0.0111 at VGS = - 10 V ID (A)b - 110 Qg (Typ) 113 nC FEATURES • TrenchFET® Power MOSFET RoHS COMPLIANT TO-263 S GDS Top View Drain Connected to Tab Ordering Information: SUM110P08-11 (Lead (Pb)-free) G D P-Channel MOSFET ABSOLUTE MAX.

Features

• TrenchFET® Power MOSFET RoHS COMPLIANT TO-263 S GDS Top View Drain Connected to Tab Ordering Information: SUM110P08-11 (Lead (Pb)-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 125 °C TA = 25 °C ID TA = 125 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = .