SUM110N03-03 - Vishay Siliconix

SUM110N03-03 N-Channel 30-V (D-S) 175C MOSFET

SUM110N03-03 New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 FEATURES rDS(on) (W) ID (A)a 110a 0.0025 @ VGS = 10 V D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage APPLICATIONS D Automotive 12-V Boardnet TO-263 G DRAIN connected to TAB G .

Features

rDS(on) (W) ID (A)a 110a 0.0025 @ VGS = 10 V D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage APPLICATIONS D Automotive 12-V Boardnet TO-263 G DRAIN connected to TAB G D S S Ordering Information: SUM110N03-03 N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Rang.