SUM110N08-07P Vishay Siliconix N-Channel 75 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 75 0.007 at VGS = 10 V ID (A) 110d Qg (Typ.) 69 TO-263 FEATURES • TrenchFET® Power MOSFETS • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous Rectification D G.
• TrenchFET® Power MOSFETS
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous Rectification
D
G DS Top View
Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C TA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUM110N08-07 |
Vishay Siliconix |
N-Channel 75-V (D-S) MOSFET | |
2 | SUM110N08-07L |
Vishay Siliconix |
N-Channel 75-V (D-S) 175C MOSFET | |
3 | SUM110N08-05 |
Vishay Siliconix |
N-Channel 75-V (D-S) 200C MOSFET | |
4 | SUM110N02-03P |
Vishay Siliconix |
N-Channel 20-V (D-S) 175 C MOSFET | |
5 | SUM110N03-03 |
Vishay Siliconix |
N-Channel 30-V (D-S) 175C MOSFET | |
6 | SUM110N03-03P |
Vishay Siliconix |
N-Channel 30-V (D-S) 175C MOSFET | |
7 | SUM110N04-03 |
Vishay Siliconix |
N-Channel 40-V (D-S) 200C MOSFET | |
8 | SUM110N04-04 |
Vishay Siliconix |
N-Channel 40-V (D-S) 175C MOSFET | |
9 | SUM110N04-05H |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUM110N04-2m1P |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
11 | SUM110N04-2M7H |
Vishay Siliconix |
N-Channel 40-V (D-S) 175C MOSFET | |
12 | SUM110N06-04L |
Vishay Siliconix |
N-Channel 60-V (D-S) 200C MOSFET |