SUM110N06-3m4L - Vishay

SUM110N06-3m4L N-Channel MOSFET

SUM110N06-3m4L www.DataSheet4U.com Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0034 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A) 110a FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT D TO-263 G G D S S Top View Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free) N-Channe.

Features

• TrenchFET® Power MOSFET
• 100 % Rg Tested RoHS COMPLIANT D TO-263 G G D S S Top View Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 60 ± 20 110a 11.