STW21NM50N - STMicroelectronics

STW21NM50N N-CHANNEL MOSFET

The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. www.DataSheet4U.com It is therefore suitable for the most demanding high efficiency converters I2PAK 3 2 1 TO-247 Figure 2.

Features

TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N
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■ Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (
*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 TO-220FP
■ 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. .