STW200NF03 - ST Microelectronics

STW200NF03 N-CHANNEL Power MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is particularly suitable in OR-ing function circuits and synchronous rectification. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s HIGH CURRENT, HIGH SWITCHING SPEED s OR-ING FUNCTION 1 TO-247.

Features

nche Energy Storage Temperature Operating Junction Temperature Value 30 30 ± 20 120 120 480 350 2.33 1.5 4 -55 to 175 Unit V V V A A A W W/°C V/ns J °C (
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•) Pulse width limited by safe operating area. (
•) Current limited by package October 2002 (1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. (2) Starting T j = 25 oC, ID = 60 A, VDD= 15V 1/8 STW200NF03 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.43 50 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °.