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STW20N60M2-EP |
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| Part Number | STW20N60M2-EP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an AM01476v1_No_tab improved vertical structure, the devic... |
| Features |
Order code
VDS
RDS(on) max.
STW20N60M2-EP
600 V
0.278 Ω
• Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected ID 13 A D(2) G(1) Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an AM01476v1_No_tab improved vertical structure, the device exhibits low on-resistance, optimized switching ch... |
| Document |
 STW20N60M2-EP Data Sheet
PDF 253.19KB |
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