STU9HN65M2 - STMicroelectronics

STU9HN65M2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1_tab Order code STU9HN65M2 Table 1: Device summ.

Features

Order code STU9HN65M2 VDS 600 V RDS(on) max. 0.82 Ω ID 5.5 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1_tab Order code STU9HN65M2 Table 1: Device summary Mark.