STU9N60M2 - STMicroelectronics

STU9N60M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD9N60M2 STP9N60M2 STU9N60M2 DS955.

Features

Order codes VDS @ TJmax RDS(on) max. ID STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A STU9N60M2
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected PTOT 60 W Package DPAK TO-220 IPAK Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency conver.