This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size“ strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low g.
Type STD90N4F3 STI90N4F3 STP90N4F3 STU90N4F3
■
■
VDSS 40 V 40 V 40 V 40 V
RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ
ID 80 A 80 A 80 A 80 A
Pw
1
3
3 2 1
110 W 110 W 110 W 110 W
DPAK
IPAK
Standard threshold drive 100% avalanche tested
1 2
3
3 12
Application
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TO-220
I²PAK
Switching applications Figure 1. Internal schematic diagram
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size“ strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU9410 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | STU95N2LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU95N2LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU95N4F3 |
ST Microelectronics |
N-channel Power MOSFET | |
5 | STU9916L |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | STU9HN65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU9N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU9N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STU9NA60 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STU9NB80 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STU9NC80Z |
ST Microelectronics |
N-Channel MOSFET | |
12 | STU9NC80ZI |
ST Microelectronics |
N-CHANNEL 800V - 0.82ohm |