Max220TM INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 .
R V GS ID ID I DM (
• ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 600 ± 30 9 5.7 36 145 1.16 -65 to 150 150
Unit V V V A A A W W/ o C
o o
C C
(
•) Pulse width limited by safe operating area
March 1996
1/5
STU9NA60
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink Tl
Thermal Resistance Junction-case .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU9N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU9N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU9NB80 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU9NC80Z |
ST Microelectronics |
N-Channel MOSFET | |
5 | STU9NC80ZI |
ST Microelectronics |
N-CHANNEL 800V - 0.82ohm | |
6 | STU9NC90Z |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU9NC90ZI |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU90N4F3 |
STMicroelectronics |
Power MOSFET | |
9 | STU9410 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | STU95N2LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STU95N2LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STU95N4F3 |
ST Microelectronics |
N-channel Power MOSFET |