This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ORDERING INFORMATION SALES.
Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 20 20 ±8 5 3.1 20 1.6 Unit V V V A A A W
( ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max Max. Operating Junction Temperature Storage Temperature 78 150
–55 to 150 °C/W °C °C
ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STT500 |
Sirectifier |
Thyristor-Thyristor Modules | |
2 | STT500GK08 |
Sirectifier |
Thyristor-Thyristor Modules | |
3 | STT500GK12 |
Sirectifier |
Thyristor-Thyristor Modules | |
4 | STT500GK14 |
Sirectifier |
Thyristor-Thyristor Modules | |
5 | STT500GK16 |
Sirectifier |
Thyristor-Thyristor Modules | |
6 | STT500GK18 |
Sirectifier |
Thyristor-Thyristor Modules | |
7 | STT5N2VH5 |
STMicroelectronics |
N-channel MOSFET | |
8 | STT5N320L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STT5NF20V |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STT5NF30L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STT-104 |
ETC |
ENCAPSUALTED TRIGGER TRANSFORMER | |
12 | STT01L07 |
SamHop Microelectronics |
N-Channel MOSFET |