STT5N320L - ST Microelectronics

STT5N320L N-CHANNEL POWER MOSFET

This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT23-6L APPLICATIONS DC-DC CONVERTE.

Features

ltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Single Pulse Avalanche Energy Value 30 30 ± 16 4 2.5 16 1.6 50 Unit V V V A A A W mJ (
•)Pulse width limited by safe operating area (1) Starting Tj =25°C, Id = 2 A, VDD = 15V. THERMAL DATA Rthj-amb Tl Tstg Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max 78 - 55 to 150 - 55 to 150 °C/W °C °C ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Cur.