This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Order code STT5N2VH5 Table 1. Device summary Marking Packages STD1 SOT23-6L Packaging Tape and reel March 2014 This is in.
4 5 6
3
2 1
SOT23-6L
Order code VDS RDS(on) max
ID PTOT
STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 1.6 W
• Very low profile package
• Conduction losses reduced
• Switching losses reduced
• 2.5 V gate drive
• Very low threshold device
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
Order code STT5N2VH5
Table 1. Device sum.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STT5N320L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STT5NF20V |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STT5NF30L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STT500 |
Sirectifier |
Thyristor-Thyristor Modules | |
5 | STT500GK08 |
Sirectifier |
Thyristor-Thyristor Modules | |
6 | STT500GK12 |
Sirectifier |
Thyristor-Thyristor Modules | |
7 | STT500GK14 |
Sirectifier |
Thyristor-Thyristor Modules | |
8 | STT500GK16 |
Sirectifier |
Thyristor-Thyristor Modules | |
9 | STT500GK18 |
Sirectifier |
Thyristor-Thyristor Modules | |
10 | STT5PF20V |
ST Microelectronics |
P-CHANNEL POWER MOSFET | |
11 | STT-104 |
ETC |
ENCAPSUALTED TRIGGER TRANSFORMER | |
12 | STT01L07 |
SamHop Microelectronics |
N-Channel MOSFET |