This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC C.
20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 20 20 ± 12 5 3 20 1.6 Unit V V V A A A W
Total Dissipation at TC = 25°C Ptot (
•) Pulse width limited by safe operating area. May 2002
.
1/8
STT5NF20V
THERMAL DATA
Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max 78 -55 to 150 -55 to 150 °C/W °C °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STT5NF30L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STT5N2VH5 |
STMicroelectronics |
N-channel MOSFET | |
3 | STT5N320L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STT500 |
Sirectifier |
Thyristor-Thyristor Modules | |
5 | STT500GK08 |
Sirectifier |
Thyristor-Thyristor Modules | |
6 | STT500GK12 |
Sirectifier |
Thyristor-Thyristor Modules | |
7 | STT500GK14 |
Sirectifier |
Thyristor-Thyristor Modules | |
8 | STT500GK16 |
Sirectifier |
Thyristor-Thyristor Modules | |
9 | STT500GK18 |
Sirectifier |
Thyristor-Thyristor Modules | |
10 | STT5PF20V |
ST Microelectronics |
P-CHANNEL POWER MOSFET | |
11 | STT-104 |
ETC |
ENCAPSUALTED TRIGGER TRANSFORMER | |
12 | STT01L07 |
SamHop Microelectronics |
N-Channel MOSFET |