The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SOT-26 is universally used for all commercial-industrial applications. Features * RoHS Compliant * Low Gate Charge * Surface Mount Package D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 2622 G1 .
* RoHS Compliant
* Low Gate Charge
* Surface Mount Package
D1 S1 5 D2 4
D1
D2
6
REF. A A1 A2 c D E E1
Date Code
2622
G1
G2
1 G1 2 S2 3 G2
S1
S2
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
Parameter
www.DataSheet4U.com Drain-Source Voltage
Symbol
VDS VGS
Ratings
50
±20
Unit
V V mA mA A W
W/ C
o o
Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STT2602 |
SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET | |
2 | STT2603 |
SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET | |
3 | STT2604 |
SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET | |
4 | STT2605 |
SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET | |
5 | STT2605-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
6 | STT200 |
Sirectifier Semiconductors |
Thyristor | |
7 | sTT2200N16P55 |
Infineon |
Soft starter | |
8 | sTT2200N18P55 |
Infineon |
Soft starter | |
9 | STT253 |
Sirectifier Semiconductors |
Thyristor | |
10 | STT27 |
Sirectifier Semiconductors |
Thyristor | |
11 | STT2PF60L |
STMicroelectronics |
P-CHANNEL POWER MOSFET | |
12 | STT-104 |
ETC |
ENCAPSUALTED TRIGGER TRANSFORMER |