STT2PF60L - STMicroelectronics

STT2PF60L P-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC C.

Features

Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 60 60 ± 15 2 1.3 8 1.6 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot (
•) Pulse width limited by safe operating area. May 2002 . Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/6 STT2PF60L THERMAL DATA Rthj-amb Rthj-amb Tj Tstg (
*)Thermal Resistance Junction-ambient (
*
*)Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max Max 78 156 150 -55 to 150 °C/W °C/W °C °C (
*) Mounted on a 1 in2 pad of 2 oz Cu in FR-4 board (
*
*) Mounted.