STT2605 - SeCoS Halbleitertechnologie GmbH

STT2605 P-Channel Enhancement Mode Power MosFET

The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2605 is universally used for all commercial-industrial applications. Features * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 .

Features

* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 REF. A A1 A2 c D E E1 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current, (Note 3) Continuous Drain Current, (Note 3) Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0..