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STT2622 |
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| Part Number | STT2622 |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SOT-26 is universally used for all commercial-in... |
| Features |
* RoHS Compliant * Low Gate Charge * Surface Mount Package
D1 S1 5 D2 4
D1
D2
6
REF. A A1 A2 c D E E1
Date Code
2622
G1
G2
1 G1 2 S2 3 G2
S1
S2
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
Parameter
www.DataSheet4U.com Drain-Source Voltage
Symbol
VDS VGS
Ratings
50
±20
Unit
V V mA mA A W
W/ C
o o
Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power ... |
| Document |
 STT2622 Data Sheet
PDF 519.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STT2602 |
SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET |
|
| 2 | STT2603 |
SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET |
|
| 3 | STT2604 |
SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET |
|
| 4 | STT2605 |
SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET |
|
| 5 | STT2605-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |
|