STS9P3LLH6 - STMicroelectronics

STS9P3LLH6 P-Channel Power MOSFET

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS9P3LLH6 Product summary Order code STS9P3LLH6 Marking 9K3L Package SO-8 Packing Tape and reel DS10146 - Rev 3 - February 2021 For further i.

Features

Order code VDS STS9P3LLH6 -30 V
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss RDS(on) max. ID 15 mΩ -9 A Applications
• Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS9P3LLH6 Product summary Order code STS9P3LLH6 Marking 9K3L Package SO-8 Packing Tape and reel DS10146 - Rev 3 - February 2021 For further information conta.