STS9NF30L - ST Microelectronics

STS9NF30L N-CHANNEL POWER MOSFET

This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulSO-8 ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses..

Features

DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 9 5.6 36 2.5 Un it V V V A A A W I DM (
• ) P tot (
•) Pulse width limited by safe operating area May 2000 1/6 STS9NF30L THERMAL DATA R thj -amb Tj T s tg (
*)Thermal Resistance Junction-ambient Maximum Operating Junction T emperature Storage Temperature 50 150 -65 to 150 o C/W o C o C (
*) Mounted on FR-4 board (t ≤ 10sec.