The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing p.
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• Operating from -40 °C to 175 °C
• Low VF
• ECOPACK®2 compliant
Description
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STPSC10H12-Y |
STMicroelectronics |
Automotive grade 1200V power Schottky silicon carbide diode | |
2 | STPSC10H12G2Y-TR |
STMicroelectronics |
silicon carbide power Schottky diode | |
3 | STPSC10H065 |
STMicroelectronics |
power Schottky silicon carbide diode | |
4 | STPSC10H065-Y |
STMicroelectronics |
Automotive 650V power Schottky silicon carbide diode | |
5 | STPSC10H065BY-TR |
STMicroelectronics |
Schottky silicon carbide diode | |
6 | STPSC10H065DLF |
STMicroelectronics |
power Schottky silicon carbide diode | |
7 | STPSC10H065G2 |
STMicroelectronics |
high surge silicon carbide power Schottky diode | |
8 | STPSC1006 |
ST Microelectronics |
Schottky silicon carbide diode | |
9 | STPSC10065 |
STMicroelectronics |
Schottky silicon carbide diode | |
10 | STPSC10065DLF |
STMicroelectronics |
power Schottky silicon carbide diode | |
11 | STPSC1006D |
STMicroelectronics |
600 V power Schottky silicon carbide diode | |
12 | STPSC10TH13TI |
STMicroelectronics |
Dual 650V power Schottky silicon carbide diode |