This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive tur.
• AEC-Q101 qualified
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• PPAP capable
• Operating Tj from -40 °C to 175 °C
• Low VF
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant
Applications
• On board charger (OBC)
• DC/DC
• PFC
Description
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky cons.
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