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STPSC10H12 |
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| Part Number | STPSC10H12 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap materi... |
| Features |
• No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating from -40 °C to 175 °C • Low VF • ECOPACK®2 compliant Description The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive ... |
| Document |
 STPSC10H12 Data Sheet
PDF 426.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STPSC10H12-Y |
STMicroelectronics |
Automotive grade 1200V power Schottky silicon carbide diode |
|
| 2 | STPSC10H12G2Y-TR |
STMicroelectronics |
silicon carbide power Schottky diode |
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| 3 | STPSC10H065 |
STMicroelectronics |
power Schottky silicon carbide diode |
|
| 4 | STPSC10H065-Y |
STMicroelectronics |
Automotive 650V power Schottky silicon carbide diode |
|
| 5 | STPSC10H065BY-TR |
STMicroelectronics |
Schottky silicon carbide diode |
|