STPSC10H065G2 - STMicroelectronics

STPSC10H065G2 high surge silicon carbide power Schottky diode

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-o.

Features

• No or negligible reverse recovery
• Switching behavior independent of temperature
• High forward surge capability
• Operating Tj from -40 °C to 175 °C
• Power efficient product
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant component Applications
• Telecom power supply
• Server power supply
• Switch mode power supply
• DCDC converters
• LLC topologies Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode.