The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.
kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
–65 to 150 150
(1)ISD ≤6A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value STP(B)6NC60(-1) STP6NC60FP 600 600 ±30 6 3.8 24 125 1.0 3 2500 6(
*) 3.8(
*) 24(
*) 40 0.32
Unit V V V A A A W W/°C V/ns V °C °C
(
•)Pulse width limited by safe operating area (
*) Limited only by maximum temperature allowed
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP6NC60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STP6NC80Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP6NC80Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STP6NC80ZFP |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STP6NC90Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STP6N120K3 |
STMicroelectronics |
N-channel MOSFET | |
7 | STP6N25 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
8 | STP6N25FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
9 | STP6N50 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
10 | STP6N50FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
11 | STP6N60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
12 | STP6N60M2 |
STMicroelectronics |
N-channel Power MOSFET |