www.DataSheet4U.com STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI s s s s s VDSS 250 V 250 V R DS(on) <1Ω <1Ω ID 6A 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 APPLICATION.
Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
Value STP6N25FI 250 250 ± 20 6 4 24 70 0.56 -65 to 150 150 4 2.6 24 35 0.28 2000
Unit
V V V A A A W W/o C
o o
C C
(
•) Pulse width limited by safe operating area
June 1993
1/10
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STP6N25/FI
THERMAL DATA
TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.79 62.5 0.5 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP6N25 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
2 | STP6N120K3 |
STMicroelectronics |
N-channel MOSFET | |
3 | STP6N50 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
4 | STP6N50FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
5 | STP6N60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
6 | STP6N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STP6N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP6N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP6N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP6N80K5 |
INCHANGE |
N-Channel MOSFET | |
11 | STP6N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STP6N95K5 |
STMicroelectronics |
Power MOSFETs |