These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes
STF6N60M2 STP6N60M2 STU6N60M2
VDS @ TJmax
RDS(on) max
ID
650 V 1.2 Ω 4.5 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
AM15572v1
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP6N60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
2 | STP6N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STP6N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP6N120K3 |
STMicroelectronics |
N-channel MOSFET | |
5 | STP6N25 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
6 | STP6N25FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
7 | STP6N50 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
8 | STP6N50FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
9 | STP6N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP6N80K5 |
INCHANGE |
N-Channel MOSFET | |
11 | STP6N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STP6N95K5 |
STMicroelectronics |
Power MOSFETs |