STP6N25 - ST Microelectronics

STP6N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

www.DataSheet4U.com STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI s s s s s VDSS 250 V 250 V R DS(on) <1Ω <1Ω ID 6A 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 APPLICATION.

Features

Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP6N25FI 250 250 ± 20 6 4 24 70 0.56  -65 to 150 150 4 2.6 24 35 0.28 2000 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area June 1993 1/10 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP6N25/FI THERMAL DATA TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.79 62.5 0.5 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature .