STP6N62K3 - STMicroelectronics

STP6N62K3 N-channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalan.

Features

TAB Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A PTOT 30 W 30 W 90 W 90 W 90 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected Applications
■ Switching applications 3 2 1 TO-220FP TAB 3 2 1 TO-220 123 I²PAK 1 23 I²PAK FP TAB IPAK 3 2 1 Figure 1. Internal schematic diagram D(2,TAB) Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ Super.