This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize onresistance and gate charge. It is therefore suitable as primary side switch allowing high efficiencies. 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes STP50NF25 STB50NF25 Marking.
Type
STP50NF25 STB50NF25
VDSS
250 V 250 V
RDS(on) Max
<0.069 Ω <0.069 Ω
ID PW
45 A 160 W 45 A 160 W
■ 100% avalanche tested
■ Gate charge minimized
■ Low intrinsic capacitances
Application
Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize onresistance and gate charge. It is therefore suitable as primary side switch allowing high efficiencies.
3 1
D²PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes STP50NF25 STB50NF25
Marking 50NF25 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP50N05L |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
2 | STP50N05LFI |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
3 | STP50N06 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
4 | STP50N06FI |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
5 | STP50N06L |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
6 | STP50N06LFI |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
7 | STP50N65DM6 |
STMicroelectronics |
N-Channel MOSFET | |
8 | STP50NE08 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
9 | STP50NE10 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
10 | STP50NE10L |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
11 | STP5011D |
Sun Microsystems |
MBus Modules | |
12 | STP53N05 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor |