STP50NE08 - ST Microelectronics

STP50NE08 N-Channel Enhancement Mode Power MOS Transistor

This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWI.

Features

S = 20 k Ω ) Drain Current (continuous) at T c = 25 C o m o .c U 4 t e e h S a t a .D w w w 3 1 2 DS(on) TO-220 INTERNAL SCHEMATIC DIAGRAM Parameter Value 80 80 Unit V V V A ± 20 50 35 o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt ( 1 ) Peak Diode Recovery voltage slope T stg Tj Storage Temperature Max. Operating Junction Temperature (
•) Pulse width limited by safe operating area (1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX March 1998 m o .c U 4 t e e h S a at .D w w w A 200 A 150 1 W W.