STP50NE10L - ST Microelectronics

STP50NE10L N-Channel Enhancement Mode Power MOS Transistor

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SP.

Features

D ID IDM(
•) Ptot Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (
•) Pulse width limited by safe operating area May 1999 Value Unit 100 V 100 V ± 20 V 50 A 35 A 200 A 150 W 1 W/oC 6 V/ns -65 to 175 oC 175 oC (1) ISD ≤ 50 A, di/dt ≤ 275 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STP50NE10L THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Res.