STP438A - SamHop Microelectronics

STP438A N-Channel Enhancement Mode Field Effect Transistor

STB/P438AGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 8.5 @ VGS=10V 40V 60A 11 @ VGS=4.5V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R.

Features

Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 40 ±20 ID Drain Current-Continuous a TC=25°C TC=70°C 60 48 IDM -Pulsed b EAS Single Pulse Avalanche Energy d 177 196 PD Maximum Power Dissipation a TC=25°C TC=70°C 62.5 40 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHAR.