www.DataSheet4U.com STB/P432S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 60A R DS(ON) (m Ω) Max 9 @ VGS=10V 11 @ VGS=4.5V D G S G D .
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 60A R DS(ON) (m Ω) Max 9 @ VGS=10V 11 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 40 ±20 TC=25°C 60 240 130 TC=25°C 62.5 -55 to 150 Units V V A A mJ W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction.
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1 | STP434S |
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2 | STP438A |
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N-Channel Enhancement Mode Field Effect Transistor | |
3 | STP438S |
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4 | STP43N60DM2 |
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5 | STP400N4F6 |
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6 | STP40N03L-20 |
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7 | STP40N06 |
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8 | STP40N06FI |
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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
9 | STP40N10 |
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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
10 | STP40N10FI |
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11 | STP40N20 |
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12 | STP40N20 |
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