STP3N80K5 - STMicroelectronics

STP3N80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 Table 1: Devic.

Features

Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected Applications
 Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency..