STP3N100 - STMicroelectronics

STP3N100 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N100 STP3N100FI s s s s s s V DSS 1000 V 1000 V R DS( on) < 5Ω < 5Ω ID 3.5 A 2A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 APPLICATIONS s.

Features

g Junction Temperature o o Value STP3N100FI 1000 1000 ± 20 3.5 2 14 100 0.8  -65 to 150 150 2 1.2 14 40 0.32 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area December 1996 1/10 www.DataSheet.in STP3N100/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.25 62.5 0.5 300 ISOWATT220 3.12 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche.