STP3NA100FI - ST Microelectronics

STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA100 STP3NA100FI s s s s s s s V DSS 1000 V 1000 V R DS(on) <5 Ω <5Ω ID 3.5 A 2A TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLT.

Features

ature Max. Operating Junction Temperature o Value STP3NA100 STP3NA100FI 1000 1000 ± 30 3.5 2.0 14 110 0.88  -65 to 150 150 2.0 1.2 14 45 0.36 2000 Unit V V V A A A W W/ o C V o o C C 1/9 (
•) Pulse width limited by safe operating area February 1998 STP3NA100/FI THERMAL DATA TO-220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1.14 62.5 0.5 300 ISOWATT220 2.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanch.