STP36NE06FP - ST Microelectronics

STP36NE06FP N-CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET

This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHI.

Features

SO dv/dt T stg Tj July 1998 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Unit STP36NE06FP 60 60 ± 20 V V V 20 14 144 35 0.27 2000 7 A A A W W/ o C V V/ns o o 36 24 144 100 0.66  -65 to 175 175 C C 1/9 (
•) Pulse width limited by safe operating area (1) ISD ≤ 36 A, d.