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w w a D . w S a t e e h U 4 t m o .c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A 21 A TYPE VDSS 60 V 60 V STP36N06 STP36N06FI s s s s s s s s TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABIL.
Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
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Parameter
t a .D
S a
e h
INTERNAL SCHEMATIC DIAGRAM
U 4 t e
1
2
.c
m o
1
3 2
ISOWATT220
Value STP36N06 60 60 ± 20 36 25 144 120 0.8 -65 to 175 175 21 14 144 40 0.27 2000 STP36N06FI
Unit
V V V A A A
(
•) Pulse width limited by safe operating area
December 1996
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.D
a t a
Sh
ee
U 4 t
W/o C V
o o
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m o .c
C C
1/10
STP36N06/FI
THERMAL DATA
TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.25 62.5 0.5 300 Thermal Resistance Junction-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP36N06 |
ST Microelectronics |
N-CHANNEL MOSFET TRANSISTOR |
|
| 2 | STP36N06L |
ST Microelectronics |
N-CHANNEL MOSFET TRANSISTOR |
|
| 3 | STP36N06LFI |
ST Microelectronics |
N-CHANNEL MOSFET TRANSISTOR |
|
| 4 | STP36N05L |
ST Microelectronics |
N-CHANNEL MOSFET TRANSISTOR |
|
| 5 | STP36N05LFI |
ST Microelectronics |
N-CHANNEL MOSFET TRANSISTOR |
|
| 6 | STP36N55M5 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 7 | STP36N55M5 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | STP36N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 9 | STP36NE06 |
ST Microelectronics |
N-CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET |
|
| 10 | STP36NE06FP |
ST Microelectronics |
N-CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET |
|
| 11 | STP36NF06 |
ST Microelectronics |
N-CHANNEL MOSFET TRANSISTOR |
|
| 12 | STP36NF06FP |
ST Microelectronics |
N-CHANNEL MOSFET TRANSISTOR |
|