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isc N-Channel MOSFET Transistor STP36N55M5 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
·With TO-220 packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
550
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current-Continuous@TC=25℃
33
A
IDM
Drain Current-Single Pulsed
132
A
PD
Total Dissipation
190
W
Tj
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-.
STP36N55M5 - STMicroelectronics
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, whic.
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