STP36NF06FP - ST Microelectronics

STP36NF06FP N-CHANNEL MOSFET TRANSISTOR

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITC.

Features

rrent (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature w w .D MARKING STP36NF06 STP36NF06FP t a S a e h INTERNAL SCHEMATIC DIAGRAM t e U 4 .c m o 1 2 3 TO-220FP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Value STP36NF06 60 60 ± 20 30 21 120 70 0.47 20 200 -55 to 175 18(
*) 12 72 25 0.17 STP36NF06FP Unit V V V A A A W W/°C V/ns mJ °C (
•) Pulse width limited by safe operat.