STP30NE06L - STMicroelectronics

STP30NE06L N-CHANNEL Power MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. www.DataSheet4U.com TO-220 TO-220FP.

Features

G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o o o Unit STP30NE06L FP 60 60 ± 20 V V V 17 12 68 30 0.2 2000 A A A W W/ oC V o o 30 21 120 80 0.53  -65 to 175 175 C C 1/9 (
•) Pulse width limited by safe operating area STP30NE06L/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.875 62.5 0.5 300 TO-220FP 5 o o o C/W C/W .