STP30NE06FP - STMicroelectronics

STP30NE06FP N-CHANNEL Power MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reprod.

Features

NTERNAL SCHEMATIC DIAGRAM Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value STP30NE06 STP30NE06FP 60 60 ± 20 30 21 120 80 0.53  7 -65 to 175 175 ( 1) ISD ≤ 30 A, di/dt ≤300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V 17 12 68 30 0.2 2000 A A A W W /o C V V/.