This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-.
Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature
o o o
Unit
STP30NE03L FP 30 30 ± 20 V V V 17 12 68 25 0.17 2000 A A A W W/ oC V
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30 21 120 70 0.47 -65 to 175 175
C C 1/9
(
•) Pulse width limited by safe operating area
STP30NE03L/FP
THERMAL DATA
TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 TO-220FP 6
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C/W C/W C/W o C
Thermal Res.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP30NE03L |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
2 | STP30NE06 |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
3 | STP30NE06FP |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
4 | STP30NE06L |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
5 | STP30NE06LFP |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
6 | STP30N05 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
7 | STP30N05FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
8 | STP30N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
9 | STP30N06FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
10 | STP30N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STP30N10F7 |
INCHANGE |
N-Channel MOSFET | |
12 | STP30N65DM6AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET |