The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionar.
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP16NK60Z |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STP16NK65Z |
ST Microelectronics |
N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET | |
3 | STP16NK65Z-S |
ST Microelectronics |
N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET | |
4 | STP16N10L |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP16N50M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STP16N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STP16N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP16N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP16N65M5 |
INCHANGE |
N-Channel MOSFET | |
10 | STP16NB25 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STP16NB25FP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STP16NE06 |
ST Microelectronics |
N-CHANNEL Power MOSFET |